%ii..u ^zmi-donductoi lpioduati, one. o' t/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bdx1s-bdx1sn pnp silicon transistors, epitaxial base transistors pnp sil1cium, base fpi taxite lf large iigrul power impljfiution amplification bf grands signaux elf puissanct high currant switching commutation fort courant . ndwljn variation de dissipation 100% 75 50 25 0 \ s \ \0 100 iso tms.(oc) j c vceo - to v ic -isa ptot 117 w th(i"c) * c/w nwx h2i 14 a) 20 - 70 fy 4 mhz min v ** to3icb1b) boititr /^nf^* ^\l ? w\ ^ ^ absolute ratings ilimiting values) valeurs limiresabsouuesd'utilisation ^otlklor^mh v0lt89? j>ni/on coflkhur-tmm collector-emittir voltage ^miior) collkteur-imettfur ""klor-emitttr volugt j^on collktnr-tmttmir h b e = 1 oo n ul?kttjr.emitt?r voltaqt .^*=r, cd???0^m.rr.ur vbe = + 1 .s v 1 filter -bait voltag* l^"?wn 6mtttwr-bf** ??ktor current f-s^"' co/ltcmir -? current u^-t/uftas* j"* duumtion ?>?mr/o/, a, pu/b.om "oiiezs c ^ui*ge and junction temperature max '""otorurt 40 ionction ? a* uockagt vcbo vceo vcer vcex vebo ic >b ptot 'i t?9 box 11 -100 -60 -70 -90 -7 -15 -7 117 20u -65+200 box ib n -7? -80 -8b -70 -7 -15 ^ -7 117 ^w -66+200 v v v v v a a w c j ctian-cim thffm.il rttittinc* l)"?v?ruf? thermiqu* junction boititr m"1 rth(j^ct ,, 1,9 c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
<^,ml-l,onauctoi 20 stern ave. springfield, new jersey 07081 u.s.a. box 18, box 18 n telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 static characteristics caracteristiques statiques 'e?? = 2bc (unlesi otherwise stated! tsfuf indications contrtim) collector-emitter cut-off current courint ffiidufl colttctiur-jmtrttur emitter-base cut-off current courtnt rtsidufl emttteur-bist collector-emitter breakdown voltage tension dt cliques* coltfcttur-tmtlttut collector -emitter breakdown voltage tension at cfoquaga cqttrctvvr-tmttttur collector-emitter breakdown voltage tension df c/*4i"#* colltcteurjmelttuf static forward current transfer ratio vtteuf satittut ttu rtpport dt trantftrt direct du counnt collector-emitter saturation voltage tension df svturftion cotltcttur-emeltfur base-emitter voltage ttntion bnt-tmftttvr test conditions cont/mom d? mnun vce =-90v vbe = -h.5v vc = -60 v vbe = +1.5v 'cas.-150"0 vce = -?v vbe=+1,5v vc = -60v vbe = 41,5v tc?,= 150c veb=-7v 'c -o lc = 200 ma 'b = lc = 200 ma 'b =? ij, = -200 ma rbe = 10on lc = -200 ma rbe = 100 n lc = -100ma vbe = +1.5v lc = -100ma vbe- + 1.6v vce = -4v lc =-4 a lc =-4 a ib =-0,4a vce = -4v lc =-4 a 'ebo vceoisus) vcer(sui)* vrcv, ,* "21 e* vcesat* vbe* box 18 box 18 box 18 n box 18n box 18 box 18 n box 18 box 18 n box 18 box 18 n min. typ. max. -s -10 -5 -10 -5 -60 -60 -70 -65 -90 -70 20 70 -1,1 -1,8 ma ma ma ma ma v v v v v v v v base-emitter voltage "ce ~~ ttniion bfn-tfn-rtttur | . = -4 a u * pulsed t ?300^s 6 <2 fmpultton* p transition frequency frequent* dt trtnsition % test conditions condition* dt mttun cce - -' a f = 1 mhz vbe* 't -1,8 min. typ. max. 4 mhz quality semi-conductors
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